inchange semiconductor isc rf product specification isc website www.iscsemi.cn 1 isc silicon npn rf transistor MMBR571L description low noise high current-gain bandwidth product f t = 8.0 ghz typ. @ i c = 50 ma high gain g nf = 16.5 db typ. @ i c = 10ma, f = 0.5 ghz applications designed for low noise , wide dynamic range front-end amplifiers and low-noise vco?s. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 20 v v ceo collector-emitter voltage 10 v v ebo emitter-base voltage 3 v i c collector current-continuous 80 ma p c collector power dissipation @t c = 75 0.33 w t j junction temperature 150 t stg storage temperature range -55~150
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 2 isc silicon npn rf transistor MMBR571L electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 1ma ; i b = 0 10 v v (br)cbo collector-base breakdown voltage i c = 0.1ma ; i e = 0 20 v v (br)ebo emitter-base breakdown voltage i e = 50 a ; i c = 0 3 v i cbo collector cutoff current v cb = 8v; i e = 0 10 a h fe dc current gain i c = 30ma ; v ce = 5v 50 300 c ob output capacitance i e = 0 ; v cb = 10v; f= 1mhz 0.7 1.0 pf f t current-gain?bandwidth product i c = 50ma ; v ce = 5v; f= 1ghz 8 ghz g nf gain@noise figure i c = 10ma ; v ce = 5v; f= 0.5ghz 16.5 db g nf gain@noise figure i c = 10ma ; v ce = 5v; f= 1ghz 10.5 db nf noise figure i c = 10ma ; v ce = 5v; f= 0.5ghz 2.0 db nf noise figure i c = 10ma ; v ce = 5v; f= 1ghz 2.6 db
inchange semiconductor isc rf product specification 3 isc website www.iscsemi.cn isc silicon npn rf transistor MMBR571L
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 4 isc silicon npn rf transistor MMBR571L s-parameter v ce = 5 v, i c = 5 ma f (mhz) s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 200 0.68 ?82 8.41 126 0.07 53 0.61 ?45 500 0.52 ?142 4.62 93 0.10 46 0.35 ?60 1000 0.50 179 2.57 72 0.14 53 0.26 ?71 1500 0.51 161 1.82 57 0.19 58 0.24 ?77 2000 0.52 143 1.48 45 0.24 59 0.22 ?86 v ce = 5 v, i c = 15 ma f (mhz) s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 200 0.46 ?125 13.65 108 0.05 60 0.35 ?73 500 0.43 ?169 6.03 86 0.09 66 0.17 ?94 1000 0.44 168 3.20 72 0.16 67 0.14 ? 111 1500 0.45 152 2.21 58 0.22 64 0.11 ?118 2000 0.46 137 1.80 48 0.29 59 0.10 ?131
inchange semiconductor isc rf product specification 5 isc website www.iscsemi.cn isc silicon npn rf transistor MMBR571L s-parameter v ce = 5 v, i c = 30 ma f (mhz) s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 200 0.42 ?148? 14.79 102 0.04 68 0.26 ?87 500 0.41 ?177? 6.31 84 0.09 72 0.14 ?115 1000 0.42 165 3.35 71 0.16 70 0.12 ?135 1500 0.44 151 2.29 59 0.23 65 0.11 ?144 2000 0.44 135 1.84 48 0.30 60 0.10 ?157 v ce = 5 v, i c = 50 ma f (mhz) s 11 s 11 s 21 s 21 s 12 s 12 s 22 s 22 200 0.41 ?159? 15.14 98 0.04 73 0.21 ?96 500 0.42 179 6.38 83 0.09 75 0.13 ?124 1000 0.43 163 3.35 70 0.16 71 0.12 ?143 1500 0.44 148 2.32 58 0.23 66 0.10 ?151 2000 0.45 134 1.84 48 0.30 60 0.09 ?163
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